Density and speed of IC’s have increased exponentially for several decades, following a trend described by Moore’s Law. While it is accepted that this exponential improvement trend will end, it is ...

The purpose of the filler portion is simply to make the channel narrower, improving gate control. Fig. 3: The Macaroni structure for 3D NAND. Charge is stored in ... But to protect the CMOS thermal ...

The Texas Instruments SN74LVC1G11DCKR is a high-performance single two-input NAND gate available now from WIN SOURCE ... Also, the device supports TTL and CMOS logic levels, delivering flexibility for ...

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According to Silicon Motion Technology, a specialist in memory device controllers, the NAND flash industry is expected to ...

SK Hynix recently released its new 1-terabit 4D NAND chips, setting a new record. The company is on a streak as it was also ...

Japanese NAND flash maker Kioxia debuted on the Tokyo Stock Exchange's Prime Market on December 18, marking a significant ...

Samsung's 9th-generation 280-layer V-NAND flash memory has only recently entered mass production, with the first commercial ...

India’s consumer electronics brand Micromax on Thursday (December 19, 2024) announced a joint venture (JV) with the Taiwanese NAND flash memory chip maker Phison to make NAND storage solutions ...

Initially masquerading as normal Ranked Gates, the Red Gates lead to immensely dangerous alternate dimensions that are different from the regular ones, as Hunters who venture through them find ...

Back in 2019 we developed the industry’s first enhancement-mode (E-mode) GaN transistor, enabled by high-k dielectric metal gate technology ... on combining the advantages of GaN and silicon CMOS on a ...