Mitsubishi Electric will begin shipping samples of two new S1-Series High Voltage IGBT modules, both rated at 1.7kV, for ...

Under the agreement, the United States would support Bosch’s investment of $1.9 billion to modernise its SiC manufacturing ...

Power Integrations has introduced a wide-creepage package option for its InnoSwitch3-AQ flyback switcher IC for automotive ...

The 2023-24 achievements of the UK's Compound Semiconductor Applications (CSA) Catapult have been published in its annual ...

GaN power transistors are at a tipping point. It’s a juncture where any small change or action leads to significant and often ...

Wise-integration, a French pioneer in digital control of GaN and GaN ICs for power conversion, and the distributor Astute ...

Mona Neubaur, Minister for Economic Affairs of the State of North Rhine-Westphalia, Germany, has opened Aixtron's new ...

The US Department of Commerce has issued funding awards to GlobalWafers and its subsidiaries of up to $406 million under the ...

Researchers from University of Science and Technology of China (USTC) have developed a 2 kV/0.45 mΩ·cm vertical GaN PiN diode ...

GaN power devices have many attributes. They are renowned for their exceptional switching efficiency and high power density, strengths that are driving the development of miniaturised, energy-saving ...